The Korean Society of Surface Science and Engineering

The molybdenum(Mo) doped indium oxide (IMO) films were deposited on glass substrates by RF magnetron sputtering and the films were vacuum annealed at 150, 300, and 450℃, respectively to investigate the influence of the annealing temperature on the electrical and optical properties of the films. The grain size of In₂O₃(222) plane increased up to 32.93 nm with annealing temperatures and their electrical resistivity decreased from 2.0×10^-3 Ωcm to 9.7×10^-4 Ωcm at the 450℃ annealing. The visible transmittance also improved from 77.62 to 80.82% when the annealing temperature increased. The optical band gap of the post-deposition annealed films increased from 3.702 to 3.751 eV proportionally with annealing temperature. The figure of merit shows that the IMO films annealed at 450℃ had better optical and electrical performance than the other films prepared using lowertemperature conditions. The observed results suggested that the post-deposition vacuum annealing is the one of effective process for the increasement of electrical and optical property of IMO thin films.

키워드 Magnetron sputter; IMO; Thin fim; Vauum anneaning; Figure of merit.