The Korean Society of Surface Science and Engineering

Polycrystalline silicon thin films were deposited by inductively coupled plasma (ICP) assisted magnetron sputtering using a gas mixture of Ar and $H_2$ on a glass substrate at $250^{circ}C$. At constant Ar mass flow rate of 10 sccm,

키워드 Polycrystalline silicon;ICP magnetron sputtering;