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KISE Journal of Korean Institute of Surface Engineering 2005;38(1):28-36. Published online: Nov, 30, -0001
In this study, the reflow characteristics of copper thin films which is expected to be used as interconnection materials in the next generation semiconductor devices were investigated. Cu thin films were deposited on the TaN diffusion barrier by metal org
키워드 Reflow;Copper film;TaN Diffusion Barrier;Pattern filling;Giga DRAM;