Aug, 31, 2024

Vol.57 No.4

최신논문 논문목록
논문검색
논문 상세 검색
학회 연락처

상세보기

  • KISE Journal of Korean Institute of Surface Engineering
  • Volume 38(4); 2005
  • Article

상세보기

KISE Journal of Korean Institute of Surface Engineering 2005;38(4):174-178. Published online: Nov, 30, -0001

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TMS를 이용한 SiC 나노박막의 성장연구

  • 양재웅;
    대진대학교 신소재공학과;
초록

Chemical vapor deposition technique has been used to grow epitaxial SiC thin films on Si wafers using tetramethylsilane(TMS) precursor. The films were observed to grow along (110) direction of 3C-SiC at $800^{circ}C$. The quality of the films w

키워드 Nanocrystalline film;Siiicon carbide;SiC;LPCVD;TMS;