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KISE Journal of Korean Institute of Surface Engineering 2006;39(5):235-239. Published online: Nov, 30, -0001
The aluminum nitride(AlN) layer on Al7075 substrate has been formed through nitrogen ion implantation process. The implantation process was performed under the conditions : 100 keV energy, total ion dose up to
키워드 Al7075;Ion implantation;AlN;Friction;Hardness;Surface modification;