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상세보기
- KISE Journal of Korean Institute of Surface Engineering
- Volume 43(4); 2010
- Article
상세보기
KISE Journal of Korean Institute of Surface Engineering 2010;43(4):170-175. Published online: Nov, 30, -0001
DOI : 10.5695/JKISE.2010.43.4.170
As과 Ga 빔 조사에 의해 세척된 Si(100) 기판 위에 GaAs 에피층 성장과 RHEED 패턴
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인제대학교 나노시스템공학과;인제대학교 나노시스템공학과;인제대학교 나노시스템공학과;
초록
The GaAs epitaxial layers were grown on Si(100) substrates by molecular beam epitaxy(MBE) using the two-step method. The Si(100) substrates were cleaned with different surface cleaning method of vacuum heating, As-beam, and Ga-beam at the substrate temper
키워드 GaAs;Si;Reflection high-energy electron diffraction;Molecular beam epitaxy;