Aug, 31, 2024

Vol.57 No.4

최신논문 논문목록
논문검색
논문 상세 검색
학회 연락처

상세보기

  • KISE Journal of Korean Institute of Surface Engineering
  • Volume 43(4); 2010
  • Article

상세보기

KISE Journal of Korean Institute of Surface Engineering 2010;43(4):176-179. Published online: Nov, 30, -0001

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DOI : 10.5695/JKISE.2010.43.4.176

기울어진 GaAs(100) 기판 위에 성장된 InAs 박막 특성에 대한 As BEP 효과

  • 김민수;임재영;
    인제대학교 나노시스템공학과;인제대학교 나노시스템공학과;
초록

The InAs thin films were grown on GaAs(100) substrate with $2^{circ}C$ tilted toward [$0ar{1}ar{1}$] with different As beam equivalent pressure (BEP) by using molecular beam epitaxy. Growth temperature and thickness of the InAs thi

키워드 GaAs;InAs;Beam equivalent pressure;Hall effect;Molecular beam epitaxy;