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KISE Journal of Korean Institute of Surface Engineering 2011;44(2):39-43. Published online: Nov, 30, -0001
DOI : 10.5695/JKISE.2011.44.2.039
Amorphous silicon thin film was deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD). Each films were prepared in different dilution in the chamber gas. As a result, silicon crystallites and crystal volume fraction was increased with raising the
키워드 PE CVD;XRD;a-Si;Optical bandgap;AFM;