Aug, 31, 2024

Vol.57 No.4

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  • KISE Journal of Korean Institute of Surface Engineering
  • Volume 47(2); 2014
  • Article

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KISE Journal of Korean Institute of Surface Engineering 2014;47(2):68-74. Published online: Nov, 30, -0001

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DOI : 10.5695/JKISE.2014.47.2.068

Pd/Cu/PVP 콜로이드를 이용한 고종횡비 실리콘 관통전극 내 구리씨앗층의 단차피복도 개선에 관한 연구

  • 이동열;이유진;김현종;이민형;
    한국생산기술연구원 표면처리연구실용화그룹;한국생산기술연구원 표면처리연구실용화그룹;한국생산기술연구원 표면처리연구실용화그룹;한국생산기술연구원 표면처리연구실용화그룹;
초록

The seed step-coverage enhancement process (SSEP) using Pd/Cu/PVP colloids was investigated for the filling of through silicon via (TSV) without void. TEM analysis showed that the Pd/Cu nano-particles were well dispersed in aqueous solution with the avera

키워드 Seed step-coverage enhancement process (SSEP);Pd/Cu/PVP colloids;Through silicon via (TSV);Electrophoresis;