Aug, 31, 2024

Vol.57 No.4

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  • KISE Journal of Korean Institute of Surface Engineering
  • Volume 48(3); 2015
  • Article

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KISE Journal of Korean Institute of Surface Engineering 2015;48(3):126-130. Published online: Nov, 30, -0001

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DOI : 10.5695/JKISE.2015.48.3.126

Substrate Temperature Dependence of Microcrystalline Silicon Thin Films by Combinatorial CVD Deposition

  • Kim, Yeonwon;
    Division of Marine Engineering, Korea Maritime University;
초록

A high-pressure depletion method using plasma chemical vapor deposition (CVD) is often used to deposit hydrogenated microcrystalline silicon (${mu}c-Si:H$) films of a low defect density at a high deposition rate. To understand proper deposition

키워드 Microrystalline silicon;Temperature dependence;Chemical vapor deposition;