Aug, 31, 2024

Vol.57 No.4

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  • KISE Journal of Korean Institute of Surface Engineering
  • Volume 49(2); 2016
  • Article

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KISE Journal of Korean Institute of Surface Engineering 2016;49(2):152-158. Published online: Nov, 30, -0001

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DOI : 10.5695/JKISE.2016.49.2.152

Effects of Plasma Treatment on Contact Resistance and Sheet Resistance of Graphene FET

  • Ra, Chang-Ho;Choi, Min Sup;Lee, Daeyeong;Yoo, Won Jong;
    SKKU Advanced Institute of Nano-Technology (SAINT), Samsung-SKKU Graphene Center (SSGC), Sungkyunkwan University;SKKU Advanced Institute of Nano-Technology (SAINT), Samsung-SKKU Graphene Center (SSGC), Sungkyunkwan University;SKKU Advanced Institute of Na
초록

We investigated the effect of capacitively coupled Ar plasma treatment on contact resistance ($R_c$) and channel sheet resistance ($R_{sh}$) of graphene field effect transistors (FETs), by varying their channel length in the wide ran

키워드 Graphene;Plasma;Contact resistance;Sheet resistance;Field effect transistor;