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KISE Journal of Korean Institute of Surface Engineering 2020;53(6):330-342. Published online: Nov, 30, -0001
DOI : 10.5695/JKISE.2020.53.6.330
Since the original report on ferroelectricity in Si-doped HfO2 in 2011, fluorite-structured ferroelectrics have attracted increasing interest due to their scalability, established deposition techniques including atomic layer deposition, and compatibility
키워드 ferroelectric;polarization switching kinetics;domain dynamics;hafnia;semiconductor devices;