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상세보기
- KISE Journal of Korean Institute of Surface Engineering
- Volume 23(4); 1990
- Article
상세보기
KISE Journal of Korean Institute of Surface Engineering 1990;23(4):197-207. Published online: Nov, 30, -0001
MOVPE 단결정층 성장법 III. 원자층 성장법
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성균관대학교 재료공학과;
초록
Atomic layer epitaxy is a relatively new epitaxial pprocess chracterized by the alternate and separate exposure of a susbstrate surface to the reactants contaning the constituent element of a compound semicoductror. The ideal ALE is expected to provide se
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