학회 연락처
- +82-2-563-0935
- +82-2-558-2230
- submission@kssse.or.kr
- https://www.kssse.or.kr/
KISE Journal of Korean Institute of Surface Engineering 1992;25(3):126-132. Published online: Nov, 30, -0001
Recent VLSI requires materials with high dielectric constant in order to reduce their storage capacitor areas. Thin TaOx film was formed from Ta(OCH3)5 by photo-CVD method at a low temperature. The result shows that the film obtained by photo-CVD method i
키워드