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상세보기
- KISE Journal of Korean Institute of Surface Engineering
- Volume 26(1); 1993
- Article
상세보기
KISE Journal of Korean Institute of Surface Engineering 1993;26(1):3-9. Published online: Nov, 30, -0001
SiH$_4$ 를 이용한 텅스텐의 화학증착시 압력증가가 증착에 미치는 영향
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서울대학교 공과대학 금속공학과;서울대학교 공과대학 금속공학과;한국과학기술원 재료연구단;
초록
Chemical vapor deposited tungsten films were formed in a cold wall reactor at pressures higher (10~120torr) than those conventionally employed (<1torr). SiH4, in addition to H2, was used as the reduction gas. The effects of pressure and reaction temperatu
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