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KISE Journal of Korean Institute of Surface Engineering 1993;26(3):127-134. Published online: Nov, 30, -0001
P+ and BF2+ were implanted to LPCVD amorphous silicon films deposited on thermally-oxidized silicon wafers and the low temperature annealing process followed with various conditions to activate implanted ions and to recrystallize the films. We tried to fi
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