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KISE Journal of Korean Institute of Surface Engineering 1996;29(6):760-765. Published online: Nov, 30, -0001
Silicon oxide thin films are prepared by plasma-enhanced CVD (PECVD) using 100kHz and 13.56MHz generators. Source gases are two sorts of mixture, tetramethoxysilane (TMOS) and oxygen, and tetramethylsilane (TMS) and oxygen. We investigate the effect of
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