Aug, 31, 2024

Vol.57 No.4

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상세보기

  • KISE Journal of Korean Institute of Surface Engineering
  • Volume 29(6); 1996
  • Article

상세보기

KISE Journal of Korean Institute of Surface Engineering 1996;29(6):773-780. Published online: Nov, 30, -0001

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LOW TEMPERATURE DEPOSITION OF SILICON OXIDE FILMS BY UV-ASSOSTED RF PLASMA-ENHANCED CVD

  • Hozumi, Atsushi;Sugimoto, Nobuhisa;Sekoguchi, Hiroki;Takai, Osamu;
    Department of Materials Processing Engineering, Nagoya University;Department of Materials Processing Engineering, Nagoya University;Department of Materials Processing Engineering, Nagoya University;Department of Materials Processing Engineering, Nagoya Un
초록

Silicon oxide films were prepared by using five kinds of organosilicon compound as gas sources without oxygen by rf plasma-enhanced CVD (PECVD). UV light was irradiated on a substrate vertically during deposition to enhance film oxidation and ablation of

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