Aug, 31, 2024

Vol.57 No.4

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  • KISE Journal of Korean Institute of Surface Engineering
  • Volume 29(6); 1996
  • Article

상세보기

KISE Journal of Korean Institute of Surface Engineering 1996;29(6):809-815. Published online: Nov, 30, -0001

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CHARACTERISTICS OF HETEROEPITAXIALLY GROWN $Y_2$O$_3$ FILMS BY r-ICB FOR VLSI

  • Choi, S.C.;Cho, M.H.;Whangbo, S.W.;Kim, M.S.;Whang, C.N.;Kang, S.B.;Lee, S.I.;Lee, M.Y.;
    Department of Physics, Yonsei University;Department of Physics, Yonsei University;Department of Physics, Yonsei University;Department of Physics, Yonsei University;Department of Physics, Yonsei University;Semiconductor Research Center, Samsung Electronics
초록

$Y_2O_3$-based metal-insulator-semiconductor (MIS) structure on p-Si(100) has been studied. Films were prepared by UHV reactive ionized cluster beam deposition (r-ICBD) system. The base pressure of the system was about $1 imes 10^{-9}$

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