Aug, 31, 2024

Vol.57 No.4

학회 연락처

상세보기

  • KISE Journal of Korean Institute of Surface Engineering
  • Volume 29(6); 1996
  • Article

상세보기

KISE Journal of Korean Institute of Surface Engineering 1996;29(6):869-875. Published online: Nov, 30, -0001

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ICP ETCHING OF TUNGSTEN FOR X-RAY MASKS

  • Jeong, C.;Song, K.;Park, C.;Jeon, Y.;Lee, D.;Ahn, J.;
    Department of Materials Engineering, Hanyang University;LG Electronics Research Center;LG Electronics Research Center;LG Electronics Research Center;LG Electronics Research Center;Department of Materials Engineering, Hanyang University;
초록

In this article the effects of process parameters of inductively coupled plasma etching with $SF_6$ /$N_2$/Ar mixture gas and mask materials on the etched profile of W were investigated. While the etched profile was improved by

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