Cl$_2$ 플라즈마를 인가한 CuCl$_{x}$성장 및 PEt$_3$를 이용한 CuCl$_{x}$의 식각에 대한 연구
박성언;김기범;
서울대학교 재료공학과;서울대학교 재료공학부;
초록
The growth kinetion of $CuCl_x$ layer on Cu was investigated using $Cl_2$ gas with/without plasma. The etching kinetics ofit was also studied, in which PEt3 gas as well as $Cl_2$ gas were used. when plasma and DC bias wer