Aug, 31, 2024

Vol.57 No.4

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상세보기

  • KISE Journal of Korean Institute of Surface Engineering
  • Volume 32(2); 1999
  • Article

상세보기

KISE Journal of Korean Institute of Surface Engineering 1999;32(2):83-92. Published online: Nov, 30, -0001

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유도 결합형 Cl$_2$계 플라즈마를 이용한 GaN 식각 특성에 관한 연구

  • 김현수;이재원;김태일;염근영;
    성균관대학교 재료공학과;삼성종합기술원 광반도체연구실;삼성종합기술원 광반도체연구실;성균관대학교 재료공학과;
초록

GaN etching was performed using planar inductively coupled $Cl_2$-based plasmas and the effects of main process parameters on the characteristics of the plasmas and their relations to GaN etch rates were studied. Also, the GaN etch mechanism wa

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