Vol.57 No.4
2021 Impact Factor 1.766
5-Year Impact Factor 1.674
KISE Journal of Korean Institute of Surface Engineering 1999;32(2):165-171. Published online: Nov, 30, -0001
The etching reaction of $UO_2$ in $CF_4/O_2$ gas plasma is examined as functions of $CF_4/O_2$ ratio, plasma power, and substrate temperature at up to $370^{circ}C$ under the total pressure of 0.30 Torr. It is f
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