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상세보기
- KISE Journal of Korean Institute of Surface Engineering
- Volume 32(3); 1999
- Article
상세보기
KISE Journal of Korean Institute of Surface Engineering 1999;32(3):239-243. Published online: Nov, 30, -0001
CHARACTERIZATION OF METALLIC CONTAMINATION OF SILICON WAFER SURFACES FOR 1G DRAM USING SYNCHROTRON ACCELERATOR
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Research Institute of Industrial Science and Technology;Soonchunhyang University;
초록
At Present, 200mm wafer technology is being applied for commercial fabrications of 64, 128, and 256 M DRAM devices, and 300mm technology will be evolved for 1G DRAM devices in the early 21th century, recognizing limitations of several process technologies
키워드 Synchrotron;Total reflection;X-ray;Semiconductor;Cleaning;