Aug, 31, 2024

Vol.57 No.4

최신논문 논문목록
논문검색
논문 상세 검색
학회 연락처

상세보기

  • KISE Journal of Korean Institute of Surface Engineering
  • Volume 32(3); 1999
  • Article

상세보기

KISE Journal of Korean Institute of Surface Engineering 1999;32(3):389-392. Published online: Nov, 30, -0001

PDF

VOID DEFECTS IN COBALT-DISILICIDE FOR LOGIC DEVICES

  • Song, Ohsung;Ahn, Youngsook;
    Department of Materials Science and Engineering, The University of Seoul;Department of Materials Science and Engineering, The University of Seoul;
초록

We employed cobalt-disilicide for high-speed logic devices. We prepared stable and low resistant $CoSi_2$ through typical fabrication process including wet cleaning and rapid thermal process (RTP). We sputtered 15nm thick cobalt on the wafer an

키워드 CoSi$_2$;surface damage;void defects;salicide;ion implantation;