Aug, 31, 2024

Vol.57 No.4

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  • KISE Journal of Korean Institute of Surface Engineering
  • Volume 32(3); 1999
  • Article

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KISE Journal of Korean Institute of Surface Engineering 1999;32(3):416-422. Published online: Nov, 30, -0001

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A Study of Dry Etch Mechanism of the GaN using Plasma Mass Spectrometry

  • Kim, H.S.;Lee, W.J.;Jang, J.W.;Yeom, G.Y.;Lee, J.W.;Kim, T.I.;
    Dept. of Materials Engineering, Sungkyunkwan University;Dept. of Materials Engineering, Sungkyunkwan University;Dept. of Materials Engineering, Sungkyunkwan University;Dept. of Materials Engineering, Sungkyunkwan University;Photonics Lab., Samsung Advance
초록

The characteristics of inductively coupled Cl$_2$/BCl$_3$ plasmas during the GaN etching were studied using plasma mass spectrometry by measuring the relative amounts of reactive ions, neutrals, and etch products. GaN etch rates incr

키워드 CaN;plasma etching;ICP;QMS;etch mechanism;