Aug, 31, 2024

Vol.57 No.4

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  • KISE Journal of Korean Institute of Surface Engineering
  • Volume 34(5); 2001
  • Article

상세보기

KISE Journal of Korean Institute of Surface Engineering 2001;34(5):503-509. Published online: Nov, 30, -0001

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Growth and Characterization of a-Si :H and a-SiC:H Thin Films Grown by RF-PECVD

  • Kim, Y.T.;S.J. Suh;D.H. Yoon;Park, M.G.;Park, W.S.;Kim, M.C.;J.H. Boo;B. Hong;G.E. Jang;
    School of Metallurgical & Materials Engineering, Sungkyunkwan University;School of Metallurgical & Materials Engineering, Sungkyunkwan University;School of Metallurgical & Materials Engineering, Sungkyunkwan University;Center for Advanced Plasma Surface T
초록

Thin films of hydrogenated amorphous silicon (a-Si : H) and hydrogenated amorphous silicon carbide (a-SiC:H) of different compositions were deposited on Si(100) wafer and glass by RF plasma-enhanced chemical vapor deposition (RF-PECVD). In the present wor

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