Aug, 31, 2024

Vol.57 No.4

최신논문 논문목록
논문검색
논문 상세 검색
학회 연락처

상세보기

  • KISE Journal of Korean Institute of Surface Engineering
  • Volume 34(5); 2001
  • Article

상세보기

KISE Journal of Korean Institute of Surface Engineering 2001;34(5):516-521. Published online: Nov, 30, -0001

PDF

The Development of Cl-Plasma Etching Procedure for Si and SiO$_2$

  • Kim, Jong-Woo;Jung, Mi-Young;Park, Sung-Soo;Boo, Jin-Hyo;
    Center for Advanced Plasma Surface Technology, Sungkyunkwan University;Department of Physics, Sunmoon University;Department of Physics, Sunmoon University;Center for Advanced Plasma Surface Technology, Sungkyunkwan University;
초록

Dry etching of Si wafer and $SiO_2$ layers was performed using He/Cl$_2$ mixture plasma by diode-type reactive ion etcher (RIE) system. For Si etching, the Cl molecules react with the Si molecules on the surface and become chemically

키워드