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상세보기
- KISE Journal of Korean Institute of Surface Engineering
- Volume 35(4); 2002
- Article
상세보기
KISE Journal of Korean Institute of Surface Engineering 2002;35(4):211-217. Published online: Nov, 30, -0001
RF-PECVD법에 의한 Ti-Si-N 박막의 증착거동
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부산대학교 재료공학부;부산대학교 재료공학부;부산대학교 재료공학부;
초록
Ti-Si-N films were deposited onto WC-Co substrate by a RF-PECVD technique. The deposition behaviors of Ti-Si-N films were investigated by varying the deposition temperature, RF power, and reaction gas ratio (Mx). Ti-Si-N films deposited at 500, 180W, and
키워드 RF-PECVD;TiSiN;nanocomposite;