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상세보기
- KISE Journal of Korean Institute of Surface Engineering
- Volume 36(2); 2003
- Article
상세보기
KISE Journal of Korean Institute of Surface Engineering 2003;36(2):135-140. Published online: Nov, 30, -0001
Si(111) 기판 위에 MOCVD 법으로 성장시킨 GaN의 성장 특성에 관한 TEM 분석
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성균관대학교 금속ㆍ재료공학부;성균관대학교 금속ㆍ재료공학부;성균관대학교 금속ㆍ재료공학부;성균관대학교 금속ㆍ재료공학부;성균관대학교 금속ㆍ재료공학부;
초록
The difference in lattice parameter and thermal expansion coefficient between GaN and Si which results in many defects into the grown GaN is larger than that between GaN and sapphire. In order to obtain high quality GaN films on Si substrate, it is essent
키워드 Gallium nitride (GaN);Aluminum nitride (AlN);Metalorganic chemical vapor deposition (MOCVD);Semiconductor;Transmission electron microscopy (TEM);